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d s g g d s gate drain source applications ? ups and inverter applications ? half-bridge and full-bridge topologies ? resonant mode power supplies ? dc/dc and ac/dc converters ? or-ing and redundant power switches ? brushed and bldc motor drive applications ? battery powered circuits benefits ? improved gate, avalanche and dynamic dv/dt ruggedness ? fully characterized capacitance and avalanche soa ? enhanced body diode dv/d t and di/dt capability ? pb-free ; rohs compliant ; halogen-free base part number package type standard pack form quantity IRF200P223 to-247ac tube 25 IRF200P223 orderable part number v dss 200v r ds(on) typ. 9.5m ? max 11.5m ? i d 100a ? to-247ac IRF200P223 g d s d final datasheet please read the important notice and warnings at the end of this document v1.0 www.infineon.com 2017-02-27 IRF200P223 ir mosfet - strongirfet? 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 i d , drain current (a) ? figure 1 typical on-resistance vs. gate voltage figure 2 maximum drain current vs. case temperature 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 60a t j = 25c t j = 125c
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 2 ? table of contents table of contents applications ?..???????????????????????????...?????..?????1 benefits ?..???????????????????????????...?????..?????.1 ordering table ?.??????????????????????????????????????1 table of contents ?.????????????????????????????????????...2 1 parameters ????????????????????????????????????3 2 maximum ratings, therma l, and avalanche characteristics ???????????????4 3 electrical characteristics ??????????????????????????????5 4 electrical ch aracteristic diagrams ??????????????????????????6 package information ????????????????????????????????????14 qualification information ???????????????????????????????????15 revision history ??????????????????????????????????..????16
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 3 ? 1 parameters table1 key performance parameters parameter values units v ds ? 200 v r ds(on) max ? 11.5 m ? i d 100 a parameters
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 4 ? table 2 maximum ratings (at t j =25 c, unless otherwise specified) parameter symbol values unit continuous drain current i d 100 a continuous drain current i d 71 pulsed drain current ? i dm 400 maximum power dissipation p d 313 w linear derating factor 2.1 w/c gate-to-source voltage v gs 20 v operating junction and storage temperature range t j t stg -55 to + 175 c soldering temperature, for 10 seconds (1.6mm from case) - 300 mounting torque, 6-32 or m3 screw - 10 lbfin (1.1 nm) - conditions t c = 25c, v gs @ 10v t c = 100c, v gs @ 10v t c = 25c t c = 25c t c = 25c - - - - notes: ?? repetitive rating; pulse width limi ted by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 0.24mh, r g = 50 ? , i as = 60a, v gs =10v. ?? i sd ? 60a, di/dt ? 2330a/s, v dd ?? v (br)dss , t j ? 175c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss e ff . (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss e ff . (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 33a, v gs =10v. table 4 avalanche characteristics parameter symbol values unit single pulse avalanche energy ? e as (thermally limited) 429 mj ? single pulse avalanche energy ? e as (thermally limited) 541 avalanche current ? i ar see fig 16, 17, 23a, 23b a repetitive avalanche energy ? e ar mj table 3 thermal characteristics parameter symbol conditions typ. max. unit junction-to-case ? r ? jc t j approximately 90c - 0.48 c/w case-to-sink, flat greased surface r ? cs - 0.24 - junction-to-ambient r ? ja - - 40 min. - - - 2 maximum ratings and thermal characteristics maximum ratings and thermal characteristics
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 5 ? d s g table 6 dynamic characteristics parameter symbol conditions values unit min. typ. max. forward trans co nductance gfs v ds = 50v, i d =60a 93 - - s total gate charge q g - 68 102 nc gate-to-source charge q gs - 25 - gate-to-drain charge q gd - 13 - total gate charge sync. (qg? qgd) q sync - 55 - turn-on delay time t d(on) v dd = 130v - 16 - ns rise time t r i d = 60a - 66 - turn-o ff delay time t d(o ff ) r g = 2.7 ? - 55 - fall time t f v gs = 10v ? - 62 - input capacitance c iss v gs = 0v - 5094 - pf output capacitance c oss v ds = 50v - 628 - reverse transfer capacitance c rss ? = 1.0mhz, see fig.7 - 8.7 - e ff ective output capacitance (energy related) c oss e ff .(er) v gs = 0v, v ds = 0v to 160v ? - 537 - output capacitance (time related) c oss e ff .(tr) v gs = 0v, v ds = 0v to 160v ? - 783 - i d = 60a v ds = 100v v gs = 10v table 7 reverse diode parameter symbol conditions values unit min. typ. max. continuous source current i s mosfet symbol - - 100 a (body diode) showing the pulsed source current integral reverse - - 400 (body diode) ? p-n junction diode. diode forward voltage v sd t j = 25c, i s = 60a,v gs = 0v ? - - 1.2 v peak diode recovery dv/dt ? dv/dt t j = 175c, i s = 60a,v ds = 200v - 15 - v/ns reverse recovery time t rr t j = 25c - 105 - ns t j = 125c ? - 150 - reverse recovery charge q rr t j = 25c - 283 - nc t j = 125c ? - 580 - reverse recovery current i rrm t j = 25c - 4.1 - a i sm v dd = 170v i f = 60a, di/dt = 100a/s ? table 5 static characteristics parameter symbol conditions values unit min. typ. max. drain-to-source breakdown voltage v (br)dss v gs = 0v, i d = 1ma 200 - - v breakdown voltage temp. coe ff icient ?v (br)dss /?t j reference to 25c, i d = 1ma ? - 0.10 - v/c static drain-to-source on-resistance r ds(on) v gs = 10v, i d = 60a - 9.5 11.5 m ? gate threshold voltage v gs(th) v ds = v gs , i d = 270a 2.0 - 4.0 v drain-to-source leakage current i dss v ds =160v, v gs =0v - - 1.0 a v ds =160v,v gs = 0v,t j =125c - - 100 gate-to-source forward leakage i gss v gs = 20v - - 100 na ? gate resistance r g - 2.7 - ?? 3 electrical characteristics electrical characteristics
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 6 ? electrical characteristic diagrams 4 electrical characteristic diagrams figure 3 typical output characteristics figure 4 typical output characteristics figure 5 typical transfer characteristics figure 6 normalized on-resistance vs. temperature ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , drain-to-source current (a) vgs top 15v 10v 7.0v 6.0v 5.5v 5.0v 4.5v bottom 4.0v ? 60s pulse width tj = 175c 4.0v 2 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.10 1.0 10 100 1000 i d , drain-to-source current (a) t j = 25c t j = 175c v ds = 50v ? 60s pulse width -60 -20 20 60 100 140 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r ds(on) , drain-to-source on resistance (normalized) i d = 60a v gs = 10v
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 7 ? electrical characteristic diagrams figure 7 typical capacitance vs. drain-to-source voltage figure 8 typical gate charge vs. gate-to-source voltage figure 9 typical source-drain diode forward voltage ? ? 0.0 0.4 0.8 1.2 1.6 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i sd , reverse drain current (a) t j = 25c t j = 175c v gs = 0v 0 102030405060708090100 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) i d = 60a vds= 160v vds= 100v vds= 40v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 1000000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 8 ? electrical characteristic diagrams figure 10 maximum safe operating area ? ? 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec dc figure 11 drain-to-source breakdown voltage figure 12 typical coss stored energy -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 195 205 215 225 235 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma 0 20 40 60 80 100 120 140 160 180 200 220 v ds, drain-to-source voltage (v) 0 2 4 6 8 10 energy (j)
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 9 ? electrical characteristic diagrams figure 13 typical on-resistance vs. drain current figure 14 threshold voltage vs. temperature ? ? 0 25 50 75 100 125 150 175 200 i d , drain current (a) 8 10 12 14 16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 6.0v vgs = 7.0v vgs = 8.0v vgs = 10v -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs(th) , gate threshold voltage (v) i d = 270a id = 1.0ma i d = 1.0a figure 15 maximum e ff ective transient thermal impedance, junction-to-case 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 10 ? electrical characteristic diagrams figure 16 avalanche current vs. pulse width ? 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 25c and tstart = 150c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) ? figure 17 maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17: (for further info, see an-1005 at www.infineon.com) 1.avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 23a, 23b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1 .3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. dt = allowable rise in juncti on temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 14) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e ar , avalanche energy (mj) top single pulse bottom 1.0% duty cycle i d = 60a
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 11 ? electrical characteristic diagrams figure 18 typical recovery current vs. dif/dt figure 19 typical recovery current vs. dif/dt ? 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 10 20 30 40 50 i rrm (a) i f = 40a v r = 170v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 10 20 30 40 50 i rrm (a) i f = 60a v r = 170v t j = 25c t j = 125c figure 20 typical stored charge vs. dif/dt figure 21 typical stored charge vs. dif/dt ? 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 500 1000 1500 2000 q rr (nc) i f = 40a v r = 170v t j = 25c t j = 125c 100 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) 0 500 1000 1500 2000 2500 q rr (nc) i f = 60a v r = 170v t j = 25c t j = 125c
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 12 ? electrical characteristic diagrams figure 22 peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets ? figure 23a unclamped inductive test circuit figure 23b unclamped inductive waveforms ?
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 13 ? electrical characteristic diagrams figure 24a switching time test circuit ? figure 24b switching time waveforms figure 25a gate charge test circuit figure 25b gate charge waveform ?
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 14 ? to-247ac package outline (dimensions are shown in millimeters (inches)) to-247ac package is not recommended for surface mount application. to-247ac part marking information year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657 package information 5 package information
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 15 ? ? applicable version of jedec standa rd at the time of product release. qualification information qualification level industrial (per jedec jesd47f) ? moisture sensitivity level to-247ac n/a rohs compliant yes qualification information 6 qualification information
final datasheet v1.0 2017-02-27 ir mosfet-strongirfet? IRF200P223 16 ? revision history revision history major changes since the last revision page or reference revision date description of changes all pages 1.0 2017-02-27 ?? first release data sheet.
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